Light emitting devices having light coupling layers with recessed electrodes

摘要

A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.

主权项

1. A method for forming a light emitting device, comprising:
forming a buffer layer; roughening a portion of the buffer layer to form a light coupling layer; and forming an electrode on the light coupling layer, wherein the light coupling layer is formed adjacent to one of an n-type semiconductor layer and a p-type semiconductor layer, wherein said one of either the n-type semiconductor layer or the p-type semiconductor layer is formed adjacent to an active layer, wherein said active layer is formed adjacent to the other of the n-type semiconductor layer and the p-type semiconductor layer, wherein said the other of the n-type semiconductor layer and the p-type semiconductor layer is formed adjacent to a support substrate, wherein the light coupling structure has a corrugated surface including a first corrugation portion and comprises an orifice extending to said one of either the n-type semiconductor layer or the p-type semiconductor layer, the orifice including a second corrugation portion different from the first corrugation portion, and wherein the electrode is formed on the second corrugation portion in the orifice, the electrode in electrical communication with said one of either the n-type semiconductor layer or the p-type semiconductor layer.