Semiconductor device and method of manufacturing the same

摘要

A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

主权项

1. A semiconductor device having a buried gate, comprising:
a lower gate contact formed in a pad area to be coupled to the buried gate in a cell area; a gate contact pad coupled to the lower gate contact, wherein the gate contact pad is simultaneously formed when a bit line is formed in the cell area; and an upper gate contact coupled to the gate contact pad and configured to couple the gate contact pad and a metal line.