Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching losses

摘要

A semiconductor device has a source metallization, drain metallization, and semiconductor body. The semiconductor body includes a drift layer of a first conductivity contacted with the drain metallization, a buffer (and field-stop) layer of the first conductivity higher in maximum doping concentration than the drift layer, and a plurality of compensation regions of a second conductivity, each forming a pn-junction with the drift and buffer layers and in contact with the source metallization. Each compensation region includes a first portion between a second portion and the source metallization. The first portions and the drift layer form a first area having a vanishing net doping. The second portions and the buffer layer form a second area of the first conductivity. A space charge region forms in the second area when a reverse voltage of more than 30% of the device breakdown voltage is applied between the drain and source metallizations.

主权项

1. A semiconductor device having a breakdown voltage, comprising:
a source metallization; a drain metallization; and a semiconductor body, comprising:
a drift layer of a first conductivity type in Ohmic contact with the drain metallization;a buffer layer and a field-stop layer of the first conductivity type, the buffer layer adjoining the drift layer and comprising a higher maximum doping concentration than the drift layer; andin a vertical cross-section a plurality of spaced apart compensation regions of a second conductivity type each of which forms a respective first pn-junction with the drift layer, the buffer layer, and the field-stop layer, and is in Ohmic contact with the source metallization, each of the compensation regions comprising a second portion and a first portion arranged between the second portion and the source metallization, the first portions and the drift layer forming a substantially band-shaped first area having a substantially vanishing net doping, the second portions and at least the buffer layer and the field-stop layer forming a substantially band-shaped second area having a net doping of the first conductivity type, wherein a space charge region forms in the second area when a reverse voltage between about 30% and at least 70% of the breakdown voltage is applied between the drain metallization and the source metallization.