发明名称 Semiconductor device including a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency
摘要 The semiconductor device includes a plurality of first flat plates containing a material that absorbs an electromagnetic wave at a high frequency. Any of the first flat plates is disposed above the first connecting wire, and any other of the first flat plates is disposed above the second connecting wire.
申请公布号 US8823053(B2) 申请公布日期 2014.09.02
申请号 US201313780771 申请日期 2013.02.28
申请人 Kabushiki Kaisha Toshiba 发明人 Sakiyama Yoko;Morizuka Kohei
分类号 H01L29/66;H01L29/739;H01L27/12 主分类号 H01L29/66
代理机构 Holtz, Holtz Goodman & Chick 代理人 Holtz, Holtz Goodman & Chick
主权项 1. A semiconductor device, comprising: an insulating substrate; a first electrode disposed on the insulating substrate; a second electrode disposed on the insulating substrate; a third electrode disposed on the insulating substrate; a first switch element disposed on the first electrode and electrically connected to the first electrode at a first terminal of the first switch element; a first connecting wire that electrically connects a second terminal of the first switch element to the third electrode; a second switch element disposed on the second electrode and electrically connected to the second electrode at a first terminal of the second switch element; a second connecting wire that electrically connects a second terminal of the second switch element to the third electrode so that the second switch element is connected in parallel with the first switch element; a first gate wire electrically connected to a gate of the first switch element; a second gate wire electrically connected to a gate of the second switch element; a third connecting wire electrically connected to the first electrode and the second electrode; a fourth connecting wire electrically connected to the third electrode; a pair of first flat plates each containing a material that absorbs electromagnetic waves; a wiring substrate disposed above the insulating substrate, wherein the first electrode and the second electrode are interposed between the wiring substrate and the insulating substrate, the wiring substrate being electrically connected to the first gate wire and the second gate wire; and a pair of second flat plates each containing the material that absorbs electromagnetic waves; wherein one of the first flat plates is disposed above the first connecting wire, and the other one of the first flat plates is disposed above the second connecting wire; wherein the one of the first flat plates is disposed above the first electrode, and the other one of the first flat plates is disposed above the second electrode; wherein the one or the other one of the first flat plates is disposed between the insulating substrate and the wiring substrate; wherein the pair of second plates are disposed on the wiring substrate; wherein the one of the first flat plates is disposed above the first switch element, and the other one of the first flat plates is disposed above the second switch element; and wherein the one or the other one of the first flat plates is disposed adjacent to the third connecting wire and the fourth connecting wire.
地址 Tokyo JP