Semiconductor light-emitting structure

摘要

A semiconductor light-emitting structure is provided, which includes a first doped type semiconductor layer, a light-emitting layer, a second doped type semiconductor layer, a first electrical transmission layer and at least one first conductor. The light-emitting layer is disposed on the first doped type semiconductor layer and the second doped type semiconductor layer is disposed on the light-emitting layer. The first electrical transmission layer is disposed on the first doped type semiconductor layer, in which a first interface is formed between the first electrical transmission layer and the first doped type semiconductor layer. The first conductor is disposed on the first doped type semiconductor layer. The first electrical transmission layer connects the first conductor. A second interface is formed between each of the first conductor and the first doped type semiconductor layer, and the resistance of the second interface is less than the resistance of the first interface.

主权项

1. A semiconductor light-emitting structure, comprising:
a first semiconductor layer; a second semiconductor layer being on the first semiconductor layer; a first electrical transmission layer being on the first semiconductor layer and not covered by the second semiconductor layer; a plurality of first conductors arranged on the first semiconductor layer and surrounded by the first electrical transmission layer; and an electrode arranged on the first semiconductor layer and having a volume greater than those of the first conductors, wherein the first semiconductor layer has a higher resistance to the first conductors, and a lower resistance to the first electrical transmission layer.