Light emitting diode

摘要

An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the second n-type GaN layer faces towards the connecting layer and has a roughened exposed portion. The GaN on the bottom surface of the second n-type GaN layer has an N-face polarity. A blind hole extends through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer. An annular rough portion is formed on the bottom surface of the second n-type GaN layer and surrounds each blind hole.

主权项

1. An LED (light emitting diode) comprising:
a substrate; a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence, a top surface of the second n-type GaN layer away from the connecting layer comprising a first area and a second area, the light emitting layer, and the p-type GaN layer formed on the first area of the top surface of the second n-type GaN layer in sequence, the connecting layer being etchable by alkaline solution, an outer edge of a bottom surface of the second n-type GaN layer which connects the connecting layer having a roughened exposed portion, the GaN on the bottom surface of the second n-type GaN layer having an N-face polarity; a blind hole extending through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to reach the connecting layer and expose the connecting layer; and an annular rough portion formed on the bottom surface of the second n-type GaN layer and surrounding the blind hole.