| 发明名称 | Semiconductor module including a switching element formed of a wide bandgap semiconductor | ||
| 摘要 | Provided is a semiconductor module having high inrush-current tolerance. A semiconductor module includes a switching element formed of a wide bandgap semiconductor, and a free wheel diode connected in antiparallel with the switching element, wherein the free wheel diode is made of silicon and has negative temperature characteristics. | ||
| 申请公布号 | US8823018(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201213600910 | 申请日期 | 2012.08.31 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Yoneyama Rei;Okabe Hiroyuki;Inoue Takahiro;Sakai Shinji |
| 分类号 | H01L29/15;H01L31/0312;H01L29/16;H01L29/66;H01L29/78 | 主分类号 | H01L29/15 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor module comprising: a switching element formed of a wide bandgap semiconductor; and only one free wheel diode connected in antiparallel with said switching element, wherein said only one free wheel diode is a diode made of silicon and has negative temperature characteristics so that when a large inrush current flows the forward voltage does not increase and the semiconductor module does not enter a positive feedback state. | ||
| 地址 | Tokyo JP | ||