METHOD OF MANUFACTURING INFRARED SENSOR MODULE HAVING SILICON INFRARED WINDOW

摘要

The present invention relates to a method of manufacturing an infrared sensor module including a silicon infrared window having an infrared sensor packaged in a vacuum state while increasing transmittance of an infrared ray by forming a thin silicon infrared window. The method includes the steps of: fabricating a device wafer by forming the infrared sensor on a silicon substrate; fabricating a silicon on insulator (SOI) cap wafer by forming a cavity in a device layer of an SOI substrate; bonding the device wafer with the SOI cap wafer in a vacuum state; and removing a silicon dioxide layer and a silicon substrate layer from the SOI cap wafer through etching.