GATE ELECTRODES WITH NOTCHES AND METHODS FOR FORMING THE SAME

摘要

A device includes a semiconductor substrate, and a device isolation (DI) region which is extended into a semiconductor substrate from the top surface of the semiconductor substrate. A gate dielectric is arranged on the active region of the semiconductor substrate. The gate dielectric is extended onto the DI region. A gate electrode is arranged on the gate dielectric. The notch of the gate electrode is overlapped with a part of the DI region.