ION BEAM IRRADIATION APPARATUS

摘要

The present invention prevents the generation of particles in a wafer processing chamber, prevents the dispersion of particles in the wafer processing chamber and prevents the adhesion of the particles to a wafer in the wafer processing chamber. An apparatus provided with a wafer processing chamber (20) which houses a wafer supporting mechanism (2) supporting a wafer (W) and is used to irradiate the wafer (W) supported by the wafer supporting mechanism (2) with an ion beam and a transport mechanism housing chamber (30) which houses a transport mechanism (3) provided underneath the wafer processing chamber (20) and used for moving the wafer supporting mechanism (2) in a substantially horizontal direction, wherein an aperture (4a) used for moving the wafer supporting mechanism (2) along with a coupling member (5) coupling the wafer supporting mechanism to the transport mechanism (3) is formed in the direction of movement of the transport mechanism (3) in a partition wall (4) separating the wafer processing chamber (20) from the transport mechanism housing chamber (30).