| 摘要 |
In relation to the presented semiconductor device in which write data are entered in serial, power consumption by charging and discharging of long distance-line is reduced. In order to accomplish the purpose of the present invention, DQSBD strobe signal is created based on DQSB2 strobe signal, and DQSBD0 to DQSBD3 strobe signals which are activated in order by being synchronized to DQSBD signal are created. DQj write data provided in a serial by being synchronized to DQSB2 signal is converted in parallel by being synchronized to DQSBD0 to DQSBD3 signals, and the DQR0 to DQR3 write data converted in parallel is sent to a memory cell array. According to the present invention, there is no need to provide a clock signal for serial parallel converting from command address based adjacent circuits to data based adjacent circuits. Therefore, reducing the power consumption caused by charging and discharging of a long distance-line becomes available. |
