GROWING METHOD OF LONG TYPE SAPPHIRE SINGLE CRYSTAL AND GROWING APPARATUS FOR THE SAME

摘要

The present invention relates to a method for growing a rod type single crystal sapphire and to an apparatus for growing the same. The present invention is to provide a method for growing a rod type single crystal sapphire which exceeds 300 mm by controlling the temperature gradient of the solid-liquid interface, and an apparatus for growing the same. The method for growing the rod type single crystal sapphire comprises: a melting step of supplying a cooling fluid through a cooling rod which is coupled to the bottom of a crucible; a first growth step of growing a single crystal sapphire to the top of a seed which did not melt in the melting step; a second growth step of growing the single crystal sapphire to a first length; and a third growth step of growing the single crystal sapphire to a second length.