| 摘要 |
#CMT# #/CMT# A crucible (10) comprises a closed end, an open end, and a length extending from the open end to the close end; a circumference (40, 41, 51) in-between the length extending from the open end to the close end; and an internal surface and an external surface. The crucible comprises >=2 parts, a base (12) and a top (11) joined at the circumference forming a joint. It is provided with a coating layer (comprising pyrolytic boron nitride and pyrolytic graphite) on portion(s) of internal surface or portion of external surface, for fixedly joining the parts by hermetically sealing the joint. #CMT# : #/CMT# An independent claim is included for a method of preparing a unibody crucible from >=2 parts. #CMT#USE : #/CMT# The crucible is used for making crystals of a semiconductor material, e.g. as molecular beam epitaxy (MBE) effusion cell or source for melting silicon at high temperature, in the process of MBE. It is for use in elemental purification, compounding, growth of large single crystals of group III-V or group II-VI semiconductor compounds, and as source containers for deposition of metals and dopants at high temperatures and ultra-high vacuum by MBE. The crucible is for use as containers for liquid-encapsulated Czochralski and vertical gradient freeze growth of gallium arsenide. #CMT#ADVANTAGE : #/CMT# The need of complicated overhang structure of graphite mandrels or the removal of the graphite mandrels by burning at high temperatures is avoided. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The figure is cross-sectional view of a multi-piece crucible, with a top and a bottom portion. 10 : Crucible 11 : Top 12 : Base 40, 41, 51 : Circumference. |
