NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

摘要

A nonvolatile memory device comprises a memory cell array and a high voltage generator to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes: a pump unit block having a plurality of pump units receiving an external voltage; a voltage increment control block to generate a voltage increment code which changes in accordance to a fixated clock signal generated using an internal voltage; a regulator to determine whether an output voltage of the pump unit block reaches a target level based on the voltage increment code; and a final stage decision block to generate a pump unit select code which changes in accordance to a variable clock signal generated using the external voltage. The number of unit pumps, among the plurality of unit pumps, used to generate the high voltage is decided based on the pump unit selection code.