发明名称 IMPROVED INTERFACE BETWEEN A I/III/VI2 LAYER AND A BACK CONTACT LAYER IN A PHOTOVOLTAIC CELL
摘要 In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.
申请公布号 KR20140105474(A) 申请公布日期 2014.09.01
申请号 KR20147016350 申请日期 2012.11.22
申请人 NEXCIS 发明人 ANGLE STEPHANIE;PARISSI LUDOVIC
分类号 H01L31/0392;H01L21/02;H01L21/36;H01L31/024;H01L31/04;H01L31/18 主分类号 H01L31/0392
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