| 摘要 |
The present invention relates to a field effect transistor semiconductor device on which a diode is mounted. The present invention includes: a substrate; a GaN buffer layer formed on the substrate; a GaN barrier layer formed on the GaN buffer layer; a gate trench on which the GaN barrier layer is remaining or completely removed; a gate insulation layer formed on the trench; a source electrode and drain electrode touching the barrier layer, penetrating the gate insulation layer; a gate electrode placed apart from the barrier layer by the gate insulation layer, placed between the source and drain electrodes; an anode electrically connected to the source electrode, touching the barrier layer by penetrating the gate insulation layer, located between the gate and drain electrodes; and a cathode electrically connected to the drain electrode. The present invention, with a short-key diode built-in on the field effect transistor, does not need to connect a diode separately outside, so the parasitic inductance substance is reduced, thereby high frequency operation is possible. Also, the present invention can drastically reduce the volume of the device. In addition, the present invention can function as a switching device without connecting an external diode, so that the converter or inverter can be manufactured in a monolithic IC. |
