| 摘要 |
The present invention relates to a chemically mechanical grinding method and a chemically mechanical grinding system using the same. The method, which is a chemical and mechanical grinding method for a wafer with an oxide layer on the bottom, comprises a grinding step of performing wet grinding by slurry and performing mechanical grinding by a grinding pad to the oxide layer of the wafer; an irradiating step of irradiating the oxide layer of the wafer; a light receiving step of receiving reflected light from a grinding surface of the wafer; and an oxide layer thickness detecting step of detecting a grinding thickness of the oxide layer from each optical interference signal for at least two wavelengths including first and second wavelengths of the reflected light. As the oxide layer thickness of the wafer is detected from the optical interference signal for the wavelengths including the first and second wavelengths, the oxide layer thickness of the wafer is accurately detected during the chemically mechanical grinding process so that a grinding end timing is accurately detected. |
