III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates to a III-nitride semiconductor light emitting device. The present invention includes a substrate; a buffer layer formed on the substrate; a first nitride semiconductor layer which is formed on the buffer layer and is doped to have a first conductivity; and a defect reduction layer which is formed between the buffer layer and the first nitride semiconductor layer, blocks the progress of crystal defects or reduces the propagation of the crystal defects which are propagated to the first nitride semiconductor by changing the propagation direction of the crystal defects. According to the present invention, the propagation of crystal defects is reduced, thereby greatly improving an optical property (for examples: IV) and an electrical property (for examples: Vr, Ir).