发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND WRITING METHOD THEREOF |
摘要 |
<p>A writing method of a semiconductor memory device according to the embodiment of the present invention includes the steps of: applying a plurality of program voltages which are successively generated to a selected word line; and supplying one among a plurality of source selection line voltages to a source selection line when the program voltages are individually applied.</p> |
申请公布号 |
KR20140104730(A) |
申请公布日期 |
2014.08.29 |
申请号 |
KR20130018595 |
申请日期 |
2013.02.21 |
申请人 |
SK HYNIX INC. |
发明人 |
KIM, TAE GYUN;AN, CHI WOOK |
分类号 |
G11C7/00;G11C7/10;G11C16/10;G11C16/34 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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