| 摘要 |
THIN FILM PHOTOVOLTAIC DEVICES (10) ARE PROVIDED THAT GENERALLY INCLUDE A TRANSPARENT CONDUCTIVE OXIDE LAYER (14) ON THE GLASS, A MULTI-LAYER N-TYPE STACK (16) ON THE TRANSPARENT CONDUCTIVE OXIDE LAYER (14), AND AN ABSORBER LAYER (E.G., A CADMIUM TELLURIDE LAYER) ON THE MULTI-LAYER N-TYPE STACK (14). THE MULTI-LAYER N-TYPE STACK (16) GENERALLY INCLUDES A FIRST LAYER (17) (E.G., A CADMIUM SULFIDE LAYER) AND A SECOND LAYER (18) (E.G., A MIXED PHASE LAYER). THE MULTI-LAYER N-TYPE STACK (16) CAN, IN CERTAIN EMBODIMENTS, INCLUDE ADDITIONAL LAYERS (E.G., A THIRD LAYER (19), A FOURTH LAYER, ETC.). METHODS ARE ALSO GENERALLY PROVIDED FOR MANUFACTURING SUCH THIN FILM PHOTOVOLTAIC DEVICES (10). |
