发明名称 MEASUREMENT MARK, METHOD FOR MEASUREMENT, AND MEASUREMENT APPARATUS
摘要 According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern;;a second line pattern, second lines extending in the first direction, the second lines being arranged in the second direction in the second line pattern, the second line pattern capable of forming a second moire pattern by overlapping with the arrangement pattern; and a reference pattern with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.
申请公布号 US2014240704(A1) 申请公布日期 2014.08.28
申请号 US201313944297 申请日期 2013.07.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOMINE Nobuhiro;OKAMOTO Yosuke
分类号 H01L23/544;G01B11/14;H01L21/66 主分类号 H01L23/544
代理机构 代理人
主权项 1. A measurement mark comprising: a first line pattern provided on an underlayer, a plurality of first lines extending in a first direction, the plurality of first lines being arranged in a second direction crossing the first direction in the first line pattern, the first line pattern being capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; a second line pattern provided on the underlayer and aligned with the first line pattern in the first direction, a plurality of second lines extending in the first direction, the plurality of second lines being arranged in the second direction in the second line pattern, the second line pattern being capable of forming a second moire pattern with a second period different from a first period of the first moire pattern by overlapping with the arrangement pattern; and a reference pattern provided on the underlayer and provided with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.
地址 Tokyo JP