发明名称 |
Semiconductor Device and Method of Forming a Vertical Interconnect Structure for 3-D FO-WLCSP |
摘要 |
A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed. |
申请公布号 |
US2014239495(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201414267800 |
申请日期 |
2014.05.01 |
申请人 |
STATS ChipPAC, Ltd. |
发明人 |
Lin Yaojian;Bao Xusheng;Chen Kang;Fang Jianmin |
分类号 |
H01L23/538;H01L23/31;H01L23/00 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
providing a first conductive layer; forming a conductive pillar over a first portion of the first conductive layer; disposing a semiconductor die over a second portion of the first conductive layer; and forming an interconnect structure over the first portion of the first conductive layer and second portion of the first conductive layer. |
地址 |
Singapore SG |