| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting diode, a light-emitting diode lamp and an illuminating device which have a high output and a high efficiency and good humidity resistance, and are suitable for 660-720 nm band light emission.SOLUTION: A light-emitting diode of the invention comprises: a light-emitting part including an active layer having a quantum well structure arranged by alternately laminating well layers of a material represented by a compositional formula (AlGa)As(0.20≤X1≤0.36) and barrier layers of a material represented by a compositional formula (AlGa)As(0<X2≤1), and first and second clad layers between which the active layer is sandwiched; a current diffusion layer formed on the light-emitting part; and a functional substrate bonded with the current diffusion layer. The first and second clad layers are made of a material represented by a compositional formula (AlGa)InP(0≤X3≤1, and 0<Y1≤1). The well layer has a thickness of 3-30 nm, and an emission wavelength set in a range of 660-720 nm. |
