| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leak current of a TFT and to suppress display troubles such as a crosstalk and display irregularity.SOLUTION: An electro-optic device includes: a scanning line 3a which is covered with a base insulating film 10b; a data line 6a; a pixel electrode 15; a semiconductor layer 30a which is disposed opposing to the scanning line 3a via the base insulating film 10b and has a source-drain region 30s on a data line side, a source-drain region 30d on a pixel electrode side, and a channel region 30c; a first insulating film 11a which covers the semiconductor layer 30a; and a gate electrode 30g which is disposed opposing to the semiconductor layer 30a via the first insulating film 11a. The source drain region 30d on the pixel electrode side of the semiconductor layer 30a has a first parasitic capacitance cd1 formed between the semiconductor layer and the gate electrode 30g and a second parasitic capacitance cd2 formed between the semiconductor layer and the scanning line 3a. The second parasitic capacitance cd2 has a first capacitance PC1 and a second capacitance PC2, in which the thickness of the base insulating film 10b in the first capacitance PC1 is smaller than the thickness of the base insulating film 10b in the second capacitance PC2. |
