| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate an offset construction of a channel caused by arrangement of a bottom insulation film between a lower diffusion layer and a gate electrode.SOLUTION: A semiconductor device comprises: a semiconductor pillar 5 which is arranged in an active region of a semiconductor substrate 1 and arranged in a direction perpendicular to a top face of the semiconductor substrate, and has a lower lateral face 60a and an upper lateral face 60b which continuously extend in the perpendicular direction; a lower diffusion layer 9A arranged on a surface layer part of the semiconductor substrate 1 around a lower end of the semiconductor pillar 5; an upper diffusion layer 16 arranged at an upper end of the semiconductor pillar; a bottom insulation film 8 which covers the top face of the semiconductor substrate 1 and covers a whole circumference of the lower lateral face 60a of the semiconductor pillar 5; a gate electrode 11 arranged around a whole circumference of the semiconductor pillar 5 and in contact with a top face of the bottom insulation film 8 and opposite to the upper lateral face 60b of the semiconductor pillar 5 across a gate insulation film; and an LDD lower diffusion layer 9B which is arranged on a surface layer part of the lower lateral face 60a and has a conductivity type the same as that of the lower diffusion layer 9A.</p> |
