| 发明名称 |
ECC Management for Variable Resistance Memory Cells |
| 摘要 |
A data storage device may generally be constructed and operated with at least a controller configured to identify a variance from a predetermined threshold in at least one variable resistance memory cell and upgrade a first error correction code (ECC) level to a second ECC level for the at least one variable resistance memory cell. |
| 申请公布号 |
US2014245108(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313779434 |
申请日期 |
2013.02.27 |
| 申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
Gaertner Mark Allen;Goss Ryan James;Khoueir Antoine;Patapoutian Ara |
| 分类号 |
G06F11/10 |
主分类号 |
G06F11/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising a controller configured to identify a variance from a predetermined threshold in at least one variable resistance memory cell and upgrade a first error correction code (ECC) level to a second ECC level for the at least one variable resistance memory cell. |
| 地址 |
Cupertino CA US |
