发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device according to an embodiment includes at least one first transistor connected at its source to an input power supply line, connected at its drain to an output power supply line, and connected at its gate to a first control line, at least one second transistor connected at its source to the input power supply line, connected at its drain to the output power supply line, and connected at its gate to a second control line, a first buffer which drives the first control line, a second buffer configured to receive a control signal input via the first control line and drive the second control line, and a plurality of transfer gates provided to divide the first control line into a plurality of pieces, the plurality of transfer gates being capable of connecting pieces obtained by dividing the first control line.
申请公布号 US2014239926(A1) 申请公布日期 2014.08.28
申请号 US201414272069 申请日期 2014.05.07
申请人 Kabushiki Kaisha Toshiba 发明人 YAMASHITA Takahiro
分类号 H02M3/156 主分类号 H02M3/156
代理机构 代理人
主权项 1. A semiconductor integrated circuit device comprising: at least one first transistor connected at a source thereof to an input power supply line, connected at a drain thereof to an output power supply line, and connected at a gate thereof to a first control line; at least one second transistor connected at a source thereof to the input power supply line, connected at a drain thereof to the output power supply line, and connected at a gate thereof to a second control line; a first buffer configured to drive the first control line; a second buffer configured to receive a control signal input via the first control line and drive the second control line; and a plurality of transfer gates provided to divide the first control line into a plurality of pieces, the plurality of transfer gates being capable of connecting pieces obtained by dividing the first control line.
地址 Minato-ku JP