| 发明名称 |
Oxygen Monolayer on a Semiconductor |
| 摘要 |
A Si or Ge semi-conductor substrate includes an oxygen monolayer on a surface thereof. The oxygen monolayer can be fractional or complete. A Si4+ or Ge4+ oxidation state of the surface of the Si or Ge substrate, respectively, resulting from the presence of the oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of the sum of Si1+, Si2+, Si3+ and Si4+ oxidation states or the sum of Ge1+, Ge2+, Ge3+ and Ge4+ oxidation states, respectively, as measured by XPS. |
| 申请公布号 |
US2014239461(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201414185497 |
申请日期 |
2014.02.20 |
| 申请人 |
IMEC |
发明人 |
Delabie Annelies;Caymax Matty |
| 分类号 |
H01L21/02;H01L29/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Si or Ge semi-conductor substrate comprising:
an oxygen monolayer on a surface of the Si or Ge substrate, wherein a Si4+ or Ge4+ oxidation state of the surface of the Si or Ge substrate, respectively, resulting from the presence of the oxygen monolayer represents less than 50% of the sum of Si1+, Si2+, Si3+ and Si4+ oxidation states or the sum of Ge1+, Ge2+, Ge3+ and Ge4+ oxidation states, respectively, as measured by XPS. |
| 地址 |
Leuven BE |
