STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

摘要

Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.

主权项

1. A semiconductor device, comprising:
a first channel comprising an N-type material raised above a substrate, the first channel having a first top surface, a first pair of sidewalls, and a first current flow direction along a first major axis of the first channel; a first channel comprising a P-type material raised above the substrate, the second channel having a second top surface, a second pair of sidewalls, and a second current flow direction along a second major axis of the second channel; a first gate wrapped around the first top surface and the first pair of sidewalls of the first channel, wherein the first gate comprises a first intrinsically stressed metal fill in which intrinsic stress of the first intrinsically stressed metal fill exerts a tensile stress upon the first channel such that charge carrier mobility in the first channel is improved in the first current flow direction; a second gate wrapped around the second top surface and the second pair of sidewalls of the second channel, wherein the second gate comprises a second intrinsically stressed metal fill in which intrinsic stress of the second intrinsically stressed metal fill exerts a compressive stress upon the second channel such that charge carrier mobility in the second channel is improved in the second current flow direction.