| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate, a first gate electrode and a second gate electrode spaced along a first direction in a first main surface of the semiconductor substrate, a first gate insulation film formed between the first gate electrode and the semiconductor substrate, a second gate insulation film formed between the second gate electrode and the semiconductor substrate, a first cap insulation film formed over the first gate electrode, a second cap insulation film formed over the second gate electrode, a third gate electrode arranged opposite to the second gate electrode across the first gate electrode, and adjacent to the first gate electrode, a fourth gate electrode arranged opposite to the first gate electrode across the second gate electrode, and adjacent to the second gate electrode, a third gate insulation film formed between the third gate electrode and the semiconductor substrate, and between the first gate electrode and the third gate electrode, and having a first charge accumulation part in the inside thereof, and a fourth gate insulation film formed between the fourth gate electrode and the semiconductor substrate, and between the second gate electrode and the fourth gate electrode, and having a second charge accumulation part in the inside thereof, wherein the first gate electrode, the first gate insulation film, the first cap insulation film, the third gate electrode, and the third gate insulation film form a first memory cell, wherein the second gate electrode, the second gate insulation film, the second cap insulation film, the fourth gate electrode, and the fourth gate insulation film form a second memory cell, and wherein in the first main surface, the end at the top surface of the first cap insulation film on the second gate electrode side is situated closer to the third gate electrode side than the side surface of the first gate electrode on the second gate electrode side. |
