发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 The light emitting element including: a semiconductor laminate including a first layer, an active layer and a second layer; a first electrode including protrusions that penetrate the second layer and the active layer, the first electrode connected to the first layer via the protrusions; a second electrode connected to the second layer on an lower face of the second layer; and an insulation film between the protrusions and the semiconductor laminate, wherein the protrusions each include a protrusion body covered with the insulation film and a protrusion tip, an upper face and a side face of the protrusion tip being exposed from the insulation film, the first layer includes recesses arranged on an upper face of the first layer so as to sandwich first areas located above the respective the protrusions, and a distance between the recesses sandwiching the first area is larger than a width of the protrusion tip.
申请公布号 US2014239341(A1) 申请公布日期 2014.08.28
申请号 US201414189207 申请日期 2014.02.25
申请人 NICHIA CORPORATION 发明人 MATSUMURA Hiroaki
分类号 H01L33/36 主分类号 H01L33/36
代理机构 代理人
主权项 1. A semiconductor light emitting element comprising: a semiconductor laminate including a first semiconductor layer, an active layer and a second semiconductor layer which are laminated in descending order from an upper face to a lower face; a first electrode including a plurality of protrusions that penetrate the second semiconductor layer and the active layer, the first electrode being connected to the first semiconductor layer via the plurality of protrusions; a second electrode connected to the second semiconductor layer on an lower face of the second semiconductor layer; and an insulation film disposed between the plurality of protrusions and the semiconductor laminate, wherein the plurality of protrusions each include a protrusion body covered with the insulation film and a protrusion tip on the protrusion body, an upper face and a side face of the protrusion tip being exposed from the insulation film, the first semiconductor layer includes a plurality of recesses that are arranged on an upper face of the first semiconductor layer so as to sandwich first areas located above the respective plurality of protrusions, and a distance between the recesses sandwiching the first area is larger than a width of the protrusion tip.
地址 Anan-shi JP