| 摘要 |
A method for producing a microscreen is described in which, in a first step, a support is provided, in a second step, a photoresist layer with a definable thickness is applied to the support, in an exposure step, the photoresist is exposed by means of the effect of radiation using a mask that defines the structure of the microscreen, in a development step, the photoresist is developed, characterized in that the thickness of the photoresist layer is selected such that, in a sub-region of the photoresist layer, the radiation used for the exposure penetrates only so slightly that practically no cross-linking of the photoresist takes place. |
