| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that allows obtaining suitable chromaticity and to provide a method of manufacturing the same.SOLUTION: A semiconductor layer has a first surface and a second surface located on the opposite side of the first surface, and has a light-emitting layer. A p-side electrode and an n-side electrode are provided in the semiconductor layer on the second surface side. A phosphor layer is provided on the first surface side and includes a plurality of fluorescent materials and a first binding material in which the plurality of fluorescent materials are integrated. A scattering layer is provided on the phosphor layer and includes a plurality of scattering materials scattering radiation light from the light-emitting layer and a second binding material in which the plurality of scattering materials are integrated.</p> |
