| 摘要 |
PROBLEM TO BE SOLVED: To provide a bottom-gate thin film transistor which includes a substrate, a gate electrode and a gate insulator, further includes a channel layer of a semiconductor composed of In-Ga-Zn-O and a protective layer on a top surface of the semiconductor, and can improve characteristics of the protective layer. ! SOLUTION: In a thin film transistor, a protective layer includes an insulating first layer provided in a lower part, for optimizing a threshold voltage, and an insulating second layer which is provided on the first layer and attaches weight to a passivation function, and the first layer is a SiO2 layer which has a film thickness within a range from 50 nm to 120 nm and contains hydrogen. ! COPYRIGHT: (C)2014,JPO&INPIT |
