| 发明名称 |
METHOD FOR PRODUCING MECHANICALLY FLEXIBLE SILICON SUBSTRATE |
| 摘要 |
A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer. |
| 申请公布号 |
US2014239459(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201214238526 |
申请日期 |
2012.08.15 |
| 申请人 |
Hussain Muhammad M.;Rojas Jhonathan P. |
发明人 |
Hussain Muhammad M.;Rojas Jhonathan P. |
| 分类号 |
H01L21/306;H01L23/00;H01L21/02 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for making silicon substrates, comprising:
providing a silicon substrate; forming a first etch stop layer in the silicon substrate; forming a second etch stop layer in the silicon substrate; and removing the silicon substrate between the first etch stop layer and the second etch stop layer. |
| 地址 |
Austin TX US |
