| 发明名称 |
U-SHAPED SEMICONDUCTOR STRUCTURE |
| 摘要 |
A method for forming a U-shaped semiconductor device includes forming trenches in a crystalline layer and epitaxially growing a U-shaped semiconductor material along sidewalls and bottoms of the trenches. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. The U-shaped semiconductor material is supported by backfilling underneath the U-shaped semiconductor material with a dielectric material. A semiconductor device is formed with the U-shaped semiconductor material. |
| 申请公布号 |
US2014239394(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313775917 |
申请日期 |
2013.02.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Doris Bruce B.;Hashemi Pouya;Khakifirooz Ali |
| 分类号 |
H01L29/66;H01L29/78;H01L21/36 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a U-shaped semiconductor device, comprising:
forming trenches in a crystalline layer; epitaxially growing a U-shaped semiconductor material along sidewalls and bottoms of the trenches; anchoring the U-shaped semiconductor material and removing the crystalline layer; supporting the U-shaped semiconductor material by backfilling underneath the U-shaped semiconductor material with a dielectric material; and forming a semiconductor device with the U-shaped semiconductor material. |
| 地址 |
Armonk NY US |
