| 摘要 |
Provided are a thin-film transistor and a manufacturing method therefor, and a display component. The thin-film transistor comprises a gate (502), a gate insulating layer (503), an active layer (504), ohmic contact layers (505a-1, 505a-2, 505a-3), a source (507a), and a drain (507b), said source (507a) and drain (507b) being connected to the active layer (504) by means of the ohmic contact layers (505a-1, 505a-2, 505a-3), said ohmic contact layers (505a-1, 505a-2, 505a-3) being located on a side surface of the active layer (504) and in contact with said side surface of the active layer (504). |
