| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming a wiring layer by a damascene method without lowering its reliability, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device comprises: an insulating film 21 provided on a semiconductor substrate 10 and having a trench 22; a Cu seed layer 26 provided along an inside surface of the trench 22; a Cu silicide layer 28 provided along a surface of the Cu seed layer 26; and a Cu wiring layer 30 provided on a surface of the Cu silicide layer 28 so as to be embedded in the trench 22. |
