发明名称 PLASMA TREATMENT APPARATUS AND METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus having no deviation of exhaust gas, capable of supporting a substrate support base so as to facilitate maintenance, and to provide a method therefor.SOLUTION: In a plasma CVD device 10, a support beam 12 including an open hole 12c penetrating side walls 11a, facing each other, of a vacuum chamber 11, also having a rectangular cross section with a plane on the upper surface, and crossing through the center of the vacuum chamber 11 is formed integrally with the vacuum chamber 11, and an upper surface open part 12a for mounting a substrate support base 13 therein is provided in the center part of the upper surface of the support beam 12, and the cylindrical substrate support base 13 is mounted in the upper surface open part 12a through a first seal member for sealing the vacuum side from the air side.</p>
申请公布号 JP2014156658(A) 申请公布日期 2014.08.28
申请号 JP20140078355 申请日期 2014.04.07
申请人 MITSUBISHI HEAVY IND LTD 发明人 MATSUDA RYUICHI;YOSHIDA KAZUTO
分类号 C23C16/458;H01L21/3065 主分类号 C23C16/458
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