| 发明名称 |
Through Vias and Methods of Formation Thereof |
| 摘要 |
In accordance with an embodiment of the present invention, a semiconductor chip includes a device region disposed in or over a substrate, a doped region disposed in the device region, and a through via disposed in the substrate. The through via extends through the doped region. |
| 申请公布号 |
US2014239411(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313776153 |
申请日期 |
2013.02.25 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Brech Helmut;Birner Albert |
| 分类号 |
H01L23/498;H01L21/768 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor chip comprising:
a device region disposed in or over a substrate; a first doped region disposed in the device region; and a first through via disposed in the substrate and extending through the first doped region. |
| 地址 |
Neubiberg DE |
