NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL

摘要

A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.

主权项

1. A nonvolatile semiconductor memory device comprising:
a semiconductor substrate; a first insulation layer formed on the semiconductor substrate; a charge storage layer formed on the first insulation layer; a second insulation layer formed on the charge storage layer; and a control electrode formed on the second insulation layer, wherein the second insulation layer includes a silicon oxide film, a first high dielectric insulating film which has a higher relative permittivity than a silicon nitride film and a second high dielectric insulating film which has a higher relative permittivity than a silicon nitride film, the first and second high dielectric insulating films being structured so that the silicon oxide film is interposed therebetween.