| 发明名称 |
FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF |
| 摘要 |
A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate; and forming a plurality of fins on top of the semiconductor substrate. The method also includes forming isolation structures between adjacent fins; and forming doping sidewall spacers in top portions of the isolation structures near the fins. Further, the method includes forming a punch-through stop layer at the bottom of each of the fins by thermal annealing the doping sidewall spacers; and forming a high-K metal gate on each of the fins. |
| 申请公布号 |
US2014239355(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313940283 |
申请日期 |
2013.07.12 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
YIN HUAXIANG;FUMITAKE MIENO |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a fin field-effect transistor, comprising:
providing a semiconductor substrate; forming a plurality of fins on the top of the semiconductor substrate; forming isolation structures between adjacent fins; forming doping sidewall spacers in top portions of the isolation structures near the fins; forming a punch-through stop layer at the bottom of each of the fins by thermal annealing of the doping sidewall spacers; and forming a high-K metal gate on each of the fins. |
| 地址 |
Shanghai CN |
