Semiconductor Structure with Inhomogeneous Regions

摘要

A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.

主权项

1. A semiconductor heterostructure comprising:
a group III nitride semiconductor layer including a plurality of inhomogeneous regions, each inhomogeneous region having a set of attributes differing from a group III nitride material forming the semiconductor layer, wherein the plurality of inhomogeneous regions include:
a set of first inhomogeneous regions configured based on radiation having a target wavelength, wherein the set of first inhomogeneous regions are at least one of: transparent to the radiation or reflective of the radiation; anda set of second inhomogeneous regions having a conductivity at least ten percent higher than a conductivity of the set of first inhomogeneous regions, wherein each of the sets of inhomogeneous regions occupy at least five percent of at least one of: a lateral planar area of the semiconductor layer or a volume of the semiconductor layer, and wherein at least some of the sets of inhomogeneous regions do not fully overlap.