| 发明名称 |
APPARATUSES INCLUDING ELECTRODES HAVING A CONDUCTIVE BARRIER MATERIAL AND METHODS OF FORMING SAME |
| 摘要 |
Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions. |
| 申请公布号 |
US2014239245(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313776485 |
申请日期 |
2013.02.25 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Lengade Swapnil A.;Meldrim John M.;Gotti Andrea |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a first chalcogenide structure; a second chalcogenide structure stacked together with the first chalcogenide structure; a first electrode portion coupled to the first chalcogenide structure; a second electrode portion coupled to the second chalcogenide structure; and an electrically conductive barrier material disposed between the first and second electrode portions. |
| 地址 |
Boise ID US |
