发明名称 IMAGING DEVICE
摘要 An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided.
申请公布号 US2014239183(A1) 申请公布日期 2014.08.28
申请号 US201414187909 申请日期 2014.02.24
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YAMAZAKI Shunpei;AKIMOTO Kengo;TAKAHASHI Hironobu;KANEMURA Hiroshi;MIYANAGA Akiharu
分类号 G01T1/20 主分类号 G01T1/20
代理机构 代理人
主权项 1. An imaging device comprising: a pixel circuit; a scintillator overlapping the pixel circuit, configured to emit light in response to radiation from a radiation source; and a shielding layer, wherein the pixel circuit includes a light-receiving element and a transistor electrically connected to the light-receiving element, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor, and wherein the shielding layer and the transistor overlap each other to prevent the transistor from being exposed to the radiation.
地址 Atsugi-shi JP