发明名称 |
IMAGING DEVICE |
摘要 |
An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided. |
申请公布号 |
US2014239183(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201414187909 |
申请日期 |
2014.02.24 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;AKIMOTO Kengo;TAKAHASHI Hironobu;KANEMURA Hiroshi;MIYANAGA Akiharu |
分类号 |
G01T1/20 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
1. An imaging device comprising:
a pixel circuit; a scintillator overlapping the pixel circuit, configured to emit light in response to radiation from a radiation source; and a shielding layer, wherein the pixel circuit includes a light-receiving element and a transistor electrically connected to the light-receiving element, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor, and wherein the shielding layer and the transistor overlap each other to prevent the transistor from being exposed to the radiation. |
地址 |
Atsugi-shi JP |