| 摘要 |
<p>A gate electrode (13) has: a base section (13a) that is formed on a nitride semiconductor layer (10); and a gate field plate section (13b) that extends on a first insulating film (14) from an upper portion of the base section (13a) toward the drain electrode (12) side. A second insulating film (15) is formed on the first insulating film (14) and the gate electrode (13). An interlayer insulating film (16) composed of a material containing SiO2 is formed on the second insulating film (15). A dielectric constant of the second insulating film (15) is set higher than that of the interlayer insulating film (16). Consequently, electric field concentration at an end of the gate field plate section can be effectively suppressed, and off-withstand voltage can be improved.</p> |
