发明名称 PROCESS FOR STABILIZING A BONDING INTERFACE, LOCATED WITHIN A STRUCTURE WHICH COMPRISES AN OXIDE LAYER AND STRUCTURE OBTAINED
摘要 The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.
申请公布号 KR20140104477(A) 申请公布日期 2014.08.28
申请号 KR20147018986 申请日期 2012.12.13
申请人 SOITEC 发明人 LANDRU DIDIER;DAVID CAROLE;RADU IONUT;CAPELLO LUCIANNA;SINQUIN YANN
分类号 H01L21/84;H01L21/20;H01L27/12 主分类号 H01L21/84
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