| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for parallel operations.SOLUTION: A semiconductor device comprises an n type impurity diffusion region 14 formed between a p type body region 2 and an ndrift layer 1 and the n type impurity diffusion region 14 has an impurity concentration higher than an impurity concentration of the ndrift layer 1. In the case where the n-type impurity diffusion region 14 exists, by projecting at least one of a gate trench 1a and an emitter trench 1b from a location where an impurity concentration in the n type impurity diffusion region 14 becomes 1×10cmto a second principal surface side, a high breakdown voltage (BV) can be held.</p> |
