| 主权项 |
1. A semiconductor device comprising:
a node to which an input voltage generated in accordance with a DC voltage is supplied; a P-channel MOS transistor having a drain, a source, and a gate, the drain and the source being coupled between the node and a load circuit, the gate being controlled in accordance with the magnitude of the input voltage; an N-channel MOS transistor whose drain and source are coupled between the node and the load circuit in parallel with the P-channel MOS transistor; and a control voltage generation circuit that generates a control voltage not higher than a clamping voltage in accordance with the DC voltage; wherein the gate of the N-channel MOS transistor is controlled in accordance with the control voltage. |
