CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) DEVICE WITH THROUGH-SUBSTRATE VIA (TSV)

摘要

A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region. A membrane layer is bonded on the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A through-substrate via (TSV) includes a dielectric liner which extends from a bottom side of the first substrate to a top surface of the membrane layer. A top side metal layer includes a first portion over the TSV, over the movable membrane, and coupling the TSV to the movable membrane. A patterned metal layer is on the bottom side surface of the first substrate including a first patterned layer portion contacting the bottom side of the first substrate lateral to the TSV.

主权项

1. A Capacitive Micromachined Ultrasonic Transducer (CMUT) device including at least one CMUT element with at least one CMUT cell, said CMUT cell including:
a first substrate including a top side including a patterned dielectric layer thereon including a thick dielectric region and a thin dielectric region; a membrane layer bonded on said thick dielectric region and over said thin dielectric region providing a movable membrane over a micro-electro-mechanical system (MEMS) cavity; a through-substrate via (TSV) including electrically conductive TSV filler material extending from a bottom side of said first substrate to a top surface of said membrane layer including a dielectric liner therein; a top side metal layer including a first portion over said TSV, over said movable membrane, and coupling said TSV to said movable membrane, and a patterned metal layer on said bottom side of said first substrate including a first patterned layer portion contacting said bottom side of said first substrate lateral to said TSV.